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                                  Philips Semiconductors Product specification Damper diode BY359X-1500, BY359X-1500S fast, high-voltage THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W Thermal resistance junction to in free air. - 55 - K/W ambient Rth j-a STATIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated BY359X-1500 BY359X-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT VF Forward voltage IF = 20 A 1.3 1.8 1.5 2.0 V IF = 10 A; T j = 150?C 1.00 1.5 1.25 1.75 V Reverse current VR = 1300 V 10 100 10 100 μA VR = 1300 V; 50 300 100 600 μA Tj = 100 ?C IR DYNAMIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated BY359X-1500 BY359X-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT t Qrrs Reverse recovery time IF = 2 A; V R ≥ 30 V; 0.47 0.60 0.28 0.35 Reverse recovery charge -dIF/dt = 20 A/μs 1.6 2.0 0.70 0.95 μs μC Vfr Peak forward recovery voltage IF = 10 A; 11.0 - 17.0 - V dIF/dt = 30 A/μs Fig.1. Definition of trr, Qs and I rrm Fig.2. Definition of Vfr 100% time dI F dt IR I F Irrm trr 25% Qs time time V F V fr V F I F September 1998 2 Rev 1.300 |